200902235-3 adva nced power electronics corp. 1/6 ap75n07gp/s-hf-3 ?2010 advanced power electronics corp. usa www.a-powerusa.com n-channel enhancement-mode power mosfet dss ds(on) d description absolute maximum ratings symbol units v ds v gs i d c i d c i dm d at t c =25c w/c t stg t j symbol value unit parameter rating gate-source voltage continuous drain current 3 continuous drain current 3 pulsed drain current 1 -55 to 175 c operating junction temperature range -55 to 175 c thermal data parameter storage temperature range a dvanced power mosfets from apec provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. the ap75n07gs-hf-3 is in the to-263 package, which is widely used g d s bv 75v fast switching performance r 11mw simple drive requirement low on-resistance rohs-compliant , halogen-free i 80 a drain-source voltage 75 v 20 v at t =2 5 c 80 a at t = 10 0 c 70 a 320 a p total power dissipation 300 w linear derating factor 2 rthj-c maximum thermal resistance, junction-case rthj- a maximum thermal resistance, junction-ambient 62 c /w 0.9 c /w for commercial and industrial surface-mount applications, and is well suited for low voltage applications such as dc/dc converters. the AP75N07GP-HF-3 is in the to-220 through-hole package which is used where a low pcb footprint or an attached heatsink is required. g d s to-263 (s) g d s to-220 (p) o rdering information ap 75 n07 g s- hf- 3t r rohs-compliant halogen-free to-2 63, shipped on tape and reel ( 8 00 pcs /reel) ap 75 n07 gp- hf- 3tb rohs-compliant halogen-free to-2 20, shipped in tubes e as single pulse avalanche energy 3 450 mj rthj- a maximum thermal resistance, junction-ambient (pcb mount) 40 c /w
adva nced power electronics corp. 2/6 ap75n07gp/s-hf-3 ?2010 advanced power electronics corp. usa www.a-powerusa.com electrical specifications at t j =25c (unless otherwise specified) this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =1ma 75 - - v d bv dss /d t j b reakdown voltage temperature coefficient reference to 25c, i d =1ma - 0.08 - v/c r ds(on) static drain-source on-resistance 2 v gs =10v, i d =40a - - 11 m? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =15v, i d =40a - 120 - s i dss drain-source leakage current v ds =75v, v gs =0v - - 1 ua drain-source leakage current (t j = 125c ) v ds =60v , v gs =0v - - 250 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge 2 i d =40a - 83 130 nc q gs gate-source charge v ds =60v - 10 - nc q gd gate-drain ("miller") charge v gs =4.5v - 51 - nc t d(on) turn-on delay time 2 v dd =40v - 15 - ns t r rise time i d =30a - 73 - ns t d(off) turn-off delay time r g =10w , v gs =10v - 340 - ns t f fall time r d =1.33w - 200 - ns c iss input capacitance v gs =0v - 4270 6830 pf c oss output capacitance v ds =25v - 690 - pf c rss reverse transfer capacitance f=1.0mhz - 320 - pf r g gate resistance f=1.0mhz - 1.8 2.7 ? symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 t j =25c, i s =40a, v gs =0v - - 1.5 v t rr reverse recovery time i s =40a, v gs =0v - 90 - ns q rr reverse recovery charge di/dt=100a/s - 235 - nc notes: 1.pulse width limited by maximum junction temperature. 2.pulse test 3.starting t j =25 o c , v dd =50v , l=1mh , r g =25w , i as =30a. 4.package limitation current is 80a . 5.surface-mounted on 1 in 2 copper pad of fr4 board source-drain diode
adva nced power electronics corp. 3/6 ap75n07gp/s-hf-3 ?2010 advanced power electronics corp. usa www.a-powerusa.com fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance vs. gate voltage fig 4. normalized on-resistance vs. junction temperature fig 5. forward characteristic of fig 6. on-resistance vs. reverse diode drain current typical electrical characteristics 0 40 80 120 160 200 240 280 036 9 1 2 v ds , drain-to-source voltage (v) i d , dr a i n c u r r e nt (a ) t c =2 5 o c v g =3.0v 10v 7.0 v 5.0v 4.5v 0 40 80 120 160 200 036 9 1 2 1 5 v ds , drain-to-source voltage (v) i d , dr a i n c u r r e nt (a ) t c = 175 o c v g =3.0v 10v 7.0 v 5.0v 4.5v 8 12 16 20 2468 1 0 v gs gate-to-source voltage (v) r ds(on) ( m w ) i d =20a t c =25 o c 0.4 0.8 1.2 1.6 2.0 2.4 25 50 75 100 125 150 175 t j , junction temperature ( o c) n o rmalize d r ds(on) i d =40a v g =10v 0 5 10 15 20 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a ) t j =25 o c t j =175 o c 9 10 11 12 13 0 2 04 0 6 08 0 i d , drain current (a) r ds(on) (m ? ) v gs =4.5v v gs =10v
adva nced power electronics corp. 4/6 ap75n07gp/s-hf-3 ?2010 advanced power electronics corp. usa www.a-powerusa.com fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform typical electrical characteristics (cont.) 100 1000 10000 1 5 9 1 31 7 2 12 5 2 9 v ds ,drain-to-source voltage (v) c ( p f) f =1.0mh z c iss c oss c rss 0 2 4 6 8 10 12 14 0 40 80 120 160 200 q g , total gate charge (nc) v gs , g a te to s o u rc e voltage ( v ) v ds = 40v v ds =4 8 v v ds =6 0 v i d = 40a 1 10 100 1000 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a ) t c =25 o c s ingle pulse 100us 1ms 10ms 100ms dc 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) n o rmalize d t h e rmal re spon se ( r th jc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 duty=0.5 single pulse q v g 4.5v q gs q gd q g charge 0 40 80 120 0 2 46 v gs , gate-to-source voltage (v) i d , dr a i n c u r r e nt (a ) t j =25 o c v ds =5v 0. 2 t j =175 o c
adva nced power electronics corp. 5/6 ap75n07gp/s-hf-3 ?2010 advanced power electronics corp. usa www.a-powerusa.com package dimensions: to-220 marking information: to-220 product: ap75n07 gp = rohs-compliant halogen-free to-220 date/lot code (ywwsss) y: last digit of the year ww: work week sss: lot code sequence package code millimeters min nom max a 4.40 4.60 4.80 b 0.76 0.88 1.00 d 8.60 8.80 9.00 c 0.36 0.43 0.50 e 9.80 10.10 10.40 l4 14.70 15.00 15.30 l5 6.20 6.40 6.60 d1 c1 1.25 1.35 1.45 b1 1.17 1.32 1.47 l 13.25 13.75 14.25 e l1 2.60 2.75 2.89 f 3.71 3.84 3.96 e1 1. all dimensions are in millimeters. 2. dimensions do not include mold protrusions. 2.54 ref. 7.4 ref, symbols 5.10 ref. e1 b b1 e d l4 l1 a c1 c l 75n07gp ywwsss f l5 e d1 1 2 3
adva nced power electronics corp. 6/6 ap75n07gp/s-hf-3 ?2010 advanced power electronics corp. usa www.a-powerusa.com package dimensions: to-263 marking information: to-263 product: ap75n07 package code: date code (ywwsss) y: last digit of the year ww: work week sss: lot code sequence gs = rohs-compliant halogen-free to-263 millimeters min nom max a 4.25 4.75 5.20 a1 0.00 0.15 0.30 a2 2.20 2.45 2.70 b 0.70 0.90 1.10 b1 1.07 1.27 1.47 c 0.30 0.45 0.60 c1 1.15 1.30 1.45 d 8.30 8.90 9.40 e 9.70 10.10 10.50 e 2.04 2.54 3.04 l2 ----- 1.50 ----- l3 4.50 4.90 5.30 l4 ----- 1.50 ---- 1. all dimensions are in millimeters. 2. dimensions do not include mold protrusions. symbols e b b1 e d l2 l3 c1 a a1 l4 c ywwsss 75n07gs ywwsss e b b1 e d l2 l3 c1 a q a1 l4 c 1 2 3
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